1 cree ? ez290-n? gen 2 leds data sheet (cathode-up) c xxx ez290-s xx 00-2 crees ezbright ? leds are the next generation of solid-state led emitters that combine highly effcient ingan materials with crees proprietary optical design and device technology to deliver superior value for high-intensity leds. the optical design maximizes light extraction effciency and enables a lambertian radiation pattern. additionally, these leds are die attachable with conductive epoxy, solder paste or solder preforms, as well as the eutectic method. these vertically structured, low forward voltage led chips are approximately 170 microns in height. crees ez? chips are tested for conformity to optical and electrical specifcations. these leds are useful in a broad range of applications, such as wearable devices, video displays and lcd backlighting. c xxx ez290-s xx 00-2 chip diagram d a t a s h e e t : c p r 3 e j r e v a features ? lambertian radiation pattern ? cathode-up design (n-pad up) ? ezbright led technology, binned @ 20 ma C 450 nm C 24+ mw C 460 nm C 24+ mw C 470 nm C 21+ mw C 527 nm C 8+ mw ? low forward voltage (vf) C 3.0 v typical at 20 ma ? maximum dc forward current C 50 ma ? ausn backside metal for use with conductive adhesives, flux eutectic attach, solder paste & solder preforms appli cations ? lcd backlighting C mobile devices C monitors ? video displays ? wearable devices ? automotive interior top view anode (+) cathode ( - ) , ? 100 m mesa (junction) 225 x 225 m side view bottom view backside ohmic met all ization thickness 170 m 280 x 280 m subject to change without notice. www.cree.com
2 maximum ratings at t a = 25c notes 1&3 c xxx ez290-s xx 00-2 dc forward current 50 ma peak forward current (1/10 duty cycle @ 1 khz) 100 ma led junction temperature 125c reverse voltage 5 v operating temperature range -40c to +100c led chip storage temperature range -40c to +120c recommended die sheet storage conditions 30c / 85% rh electrostatic discharge threshold (hbm) note 2 1000 v electrostatic discharge classifcation (mil-std-883e) note 2 class 2 typical electrical/optical characteristics at t a = 25c, if = 20 ma note 3 part number forward voltage (v f , v) reverse current [i(vr=5v), a] full width half max ( o d , nm) min. typ. max. max. typ. c450ez290-s xx 00-2 2.7 3.0 3.5 2 20 c460ez290-s xx 00-2 2.7 3.0 3.5 2 21 c470ez290-s xx 00-2 2.7 3.0 3.5 2 22 c527ez290-s xx 00-2 2.9 3.2 3.7 2 35 mechanical specifcations c xxx ez290-s xx 00-2 description dimension tolerance p-n junction area (m) 225 x 225 25 top area (m) 280 x 280 25 bottom area (m) 280 x 280 25 chip thickness (m) 170 25 au bond pad diameter (m) 100 -15, +5 au bond pad thickness (m) 3.0 1.0 back ohmic metal area (m) 280 x 280 25 back ohmic metal thickness (m) 3.0 0.3 notes: 1. maximum ratings are package-dependent. the above ratings were determined using a thru-hole package (with hysol ? os4000 epoxy encapsulation) for characterization. ratings for other packages may differ. the forward currents (dc and peak) are not limited by the die but by the effect of the led junction temperature on the package. the junction temperature limit of 125 c is a limit of the thru-hole package; junction temperature should be characterized in a specifc package to determine limitations. assembly processing temperature must not exceed 325c (< 5 seconds). see the cree ez applications note for assembly process information. 2. product resistance to electrostatic discharge (esd) according to the hbm is measured b y simulating esd using a rapid avalanche energy test (raet). the raet procedures are designed to approximate the maximum esd ratings shown. the raet procedure is performed on each die. the esd classifcation of class 2 is based on sample testing according to mil -std-883e. 3. all products conform to the listed minimum and maximum specifcations for electrical and optical char acteristics when assembled and operated at 20 ma within the maximum ratings shown above. effciency decreases at higher currents. typical values given are within the range of average values expected by manufacturer in large quantities and are provided for information only. all measurements were made using lamps in thru-hole packages (with hysol os4000 epo xy encapsulation). optical characteristics measured in an integrating sphere using illuminance e. 4. specifcations are subject to change without notice. ? 2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree?, the cree logo, and ezbright? are registered trademarks, and ez? and ez290-n? are trademarks of cree, inc. hysol ? is a registered trademark of henkel corporation. cpr3ej rev a (201503) cree, inc. 4600 silicon drive durham, nc 27703-8475 usa tel: +1.919.313.5300 fax: +1.919.313.5778 www.cree.com/chips
3 standard bins for c xxx ez290-s xx 00-2 led chips are sorted to the radiant fux and dominant wavelength bins shown. a sorted die sheet contains die from only one bin. sorted die kit (c xxx ez290-s xxxx -2) orders may be flled with any or all bins (c xxx ez290- xxxx -2) contained in the kit. all radiant fux and dominant wavelength values shown are specifed at if = 20 ma. c450ez290-s2400-2 c450ez290-0417-2 c450ez290-0418-2 c450ez290-0419-2 c450ez290-0420-2 c450ez290-0413-2 c450ez290-0414-2 c450ez290-0415-2 c450ez290-0416-2 c450ez290-0409-2 c450ez290-0410-2 c450ez290-0411-2 c450ez290-0412-2 c450ez290-0405-2 c450ez290-0406-2 c450ez290-0407-2 c450ez290-0408-2 32 30 27 24 dominant wavelength (nm) radiant flux (mw) 447.5 450 452.5 445 455 c460ez290-s2400-2 c460ez290-0417-2 c460ez290-0418-2 c460ez290-0419-2 c460ez290-0420-2 c460ez290-0413-2 c460ez290-0414-2 c460ez290-0415-2 c460ez290-0416-2 c460ez290-0409-2 c460ez290-0410-2 c460ez290-0411-2 c460ez290-0412-2 c460ez290-0405-2 c460ez290-0406-2 c460ez290-0407-2 c460ez290-0408-2 32 30 27 24 dominant wavelength (nm) radiant flux (mw) 457.5 460 462.5 455 465 ? 2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree?, the cree logo, and ezbright? are registered trademarks, and ez? and ez290-n? are trademarks of cree, inc. hysol ? is a registered trademark of henkel corporation. cpr3ej rev a (201503) cree, inc. 4600 silicon drive durham, nc 27703-8475 usa tel: +1.919.313.5300 fax: +1.919.313.5778 www.cree.com/chips
4 standard bins for c xxx ez290-s xx 00-2 led chips are sorted to the radiant fux and dominant wavelength bins shown. a sorted die sheet contains die from only one bin. sorted die kit (c xxx ez290-s xxxx -2) orders may be flled with any or all bins (c xxx ez290- xxxx -2) contained in the kit. all radiant fux and dominant wavelength values shown are specifed at if = 20 ma. C527EZ290-S0800-2 c527ez290-0410-2 c527ez290-0411-2 c527ez290-0412-2 c527ez290-0407-2 c527ez290-0408-2 c527ez290-0409-2 c527ez290-0404-2 c527ez290-0405-2 c527ez290-0406-2 c527ez290-0401-2 c527ez290-0402-2 c527ez290-0403-2 520 525 530 535 14 12 10 8 dominant wavelength (nm) radiant flux (mw) c470ez290-s2100-2 c470ez290-0413-2 c470ez290-0414-2 c470ez290-0415-2 c470ez290-0416-2 c470ez290-0409-2 c470ez290-0410-2 c470ez290-0411-2 c470ez290-0412-2 c470ez290-0405-2 c470ez290-0406-2 c470ez290-0407-2 c470ez290-0408-2 c470ez290-0401-2 c470ez290-0402-2 c470ez290-0403-2 c470ez290-0404-2 30 27 24 21 dominant wavelength (nm) radiant flux (mw) 467.5 470 472.5 465 475 ? 2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree?, the cree logo, and ezbright? are registered trademarks, and ez? and ez290-n? are trademarks of cree, inc. hysol ? is a registered trademark of henkel corporation. cpr3ej rev a (201503) cree, inc. 4600 silicon drive durham, nc 27703-8475 usa tel: +1.919.313.5300 fax: +1.919.313.5778 www.cree.com/chips
5 characteristic curves these are representative measurements for the ez led product. actual curves will vary slightly for the various radiant fux and dominant wavelength bins. 0% 100% 200% 300% 400% 0 20 40 60 80 100 relative intensity if (ma) relative intensity vs. forward current - 15 - 10 - 5 0 5 10 0 20 40 60 80 100 dw shift (nm) if (ma) wavelength shift vs. forward current 0 20 40 60 80 100 2 3 4 5 if (ma) vf (v) forward current vs. forward voltage ? 2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree?, the cree logo, and ezbright? are registered trademarks, and ez? and ez290-n? are trademarks of cree, inc. hysol ? is a registered trademark of henkel corporation. cpr3ej rev a (201503) cree, inc. 4600 silicon drive durham, nc 27703-8475 usa tel: +1.919.313.5300 fax: +1.919.313.5778 www.cree.com/chips
6 radiation pattern this is a representative radiation pattern for the ezbright led product. actual patterns will vary slightly for each chip. ? 2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree?, the cree logo, and ezbright? are registered trademarks, and ez? and ez290-n? are trademarks of cree, inc. hysol ? is a registered trademark of henkel corporation. cpr3ej rev a (201503) cree, inc. 4600 silicon drive durham, nc 27703-8475 usa tel: +1.919.313.5300 fax: +1.919.313.5778 www.cree.com/chips
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